Continuous-wave operation of all-epitaxial InP-based 1.3 μm VCSELs with 57% differential quantum efficiency

Electronics Letters

Volumn 41, Issue 14, 2005, Pages 803-804

  Feezell, D ^a   Buell, D A ^a   Coldren, L A ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ETCHING; LASER BEAM EFFECTS; LIGHT ABSORPTION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE;

DIFFERENTIAL QUANTUM EFFICIENCY; LASING; VCSEL; WAVELENGTH;

CONTINUOUS WAVE LASERS;

EID: 22944485038     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051827     Document Type: Article

References (8)

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3. Nishiyama, N., Caneau, C., Hall, B., Guryanov, G., Hu, M., Liu, X., Bhat, R., and Zah, C.: 'Temperature, modulation, and reliability characteristics of 1.3 μm-VCSELs on InP with AlGalnAs/InP lattice matched DBR'. IEEE Semiconductor Laser Conference, Matsue-shi, Japan, 2004
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