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1
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49549087968
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A 320mV 56 μw 411GOPS/Watt ultra-low voltage motion estimation accelerator in 65 nm CMOS
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Feb.
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H. Kaul, M. Anders, S. Mathew, S. Hsu, A. Agarwal, R. Krishnamurthy, and S. Borkar, "A 320mV 56 μW 411GOPS/Watt ultra-low voltage motion estimation accelerator in 65 nm CMOS," IEEE International Solid-State Circuits Conference, pp.316-317, Feb. 2008.
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(2008)
IEEE International Solid-State Circuits Conference
, pp. 316-317
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Kaul, H.1
Anders, M.2
Mathew, S.3
Hsu, S.4
Agarwal, A.5
Krishnamurthy, R.6
Borkar, S.7
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2
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31344455697
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Ultra-dynamic voltage scaling (UDVS) using sub-threshold operation and local voltage dithering
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Jan.
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B. Calhoun and A. Chandrakasan, "Ultra-dynamic voltage scaling (UDVS) using sub-threshold operation and local voltage dithering," IEEE J. Solid-State Circuits, vol.41, no.1, pp.238-245, Jan. 2006.
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(2006)
IEEE J. Solid-State Circuits
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Calhoun, B.1
Chandrakasan, A.2
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3
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39749186100
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Performance and variability optimization strategies in a sub-200mV, 3.5 pJ/inst, 11 nW subthreshold processor
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June
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S. Hanson, B. Zhai, M. Seok, B. Cline, K. Zhou, M. Singhal, M. Minuth, J. Olson, L. Nazhan-dali, T. Austin, D. Sylvester, and D. Blaauw, "Performance and variability optimization strategies in a sub-200mV, 3.5 pJ/inst, 11 nW subthreshold processor," IEEE Symposium on VLSI Circuits, pp.152-153, June 2007.
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(2007)
IEEE Symposium on VLSI Circuits
, pp. 152-153
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Hanson, S.1
Zhai, B.2
Seok, M.3
Cline, B.4
Zhou, K.5
Singhal, M.6
Minuth, M.7
Olson, J.8
Nazhan-Dali, L.9
Austin, T.10
Sylvester, D.11
Blaauw, D.12
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4
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37749015480
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A 85mV 40 nW process-tolerant subthreshold 8 × 8 FIR filter in 130 nm technology
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June
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M. Hwang, A. Raychowdhury, K. Kim, and K. Roy, "A 85mV 40 nW process-tolerant subthreshold 8 × 8 FIR filter in 130 nm technology," IEEE Symposium on VLSI Circuits, pp.154-155, June 2007.
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(2007)
IEEE Symposium on VLSI Circuits
, pp. 154-155
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Hwang, M.1
Raychowdhury, A.2
Kim, K.3
Roy, K.4
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6
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49549103577
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A 32 kb 10 T subthreshold SRAM array with bit-interleaving and differential read scheme in 90 nm CMOS
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Feb.
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I. Chang, J. Kim, S. Park, and K. Roy, "A 32 kb 10 T Subthreshold SRAM Array with Bit-Interleaving and Differential Read Scheme in 90 nm CMOS," IEEE International Solid-State Circuits Conference, pp.388-389, Feb. 2008.
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(2008)
IEEE International Solid-State Circuits Conference
, pp. 388-389
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Chang, I.1
Kim, J.2
Park, S.3
Roy, K.4
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7
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49749084887
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Dependence of minimum operating voltage (VDDmin) on block size of 90-nm CMOS ring oscillators and its implications in low power DFM
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March
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T. Niiyama, P. Zhe, K. Ishida, M. Murakata, M. Takamiya, and T. Sakurai, "Dependence of minimum operating voltage (VDDmin) on block size of 90-nm CMOS ring oscillators and its implications in low power DFM," IEEE International Symposium on Quality Electronic Design, pp.133-136, March 2008.
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(2008)
IEEE International Symposium on Quality Electronic Design
, pp. 133-136
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Niiyama, T.1
Zhe, P.2
Ishida, K.3
Murakata, M.4
Takamiya, M.5
Sakurai, T.6
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8
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57549091208
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Increasing minimum operating voltage (VDDmin) with number of CMOS logic gates and experimental verification with up to 1 mega-stage ring oscillators
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Bangalore, India, Aug.
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T. Niiyama, P. Zhe, K. Ishida, M. Murakata, M. Takamiya, and T. Sakurai, "Increasing minimum operating voltage (VDDmin) with number of CMOS logic gates and experimental verification with up to 1 mega-stage ring oscillators," International Symposium on Low Power Electronics and Design, pp.117-122, Bangalore, India, Aug. 2008.
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(2008)
International Symposium on Low Power Electronics and Design
, pp. 117-122
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Niiyama, T.1
Zhe, P.2
Ishida, K.3
Murakata, M.4
Takamiya, M.5
Sakurai, T.6
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9
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0036858210
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Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage
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DOI 10.1109/JSSC.2002.803949
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J. Tschanz, J. Kao, S. Narendra, R. Nair, D. Antoniadis, A. Chandrakasan, and V. De, "Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage," IEEE J. Solid-State Circuits, vol.37, no.11, pp.1396-1402, Nov. 2002. (Pubitemid 35432159)
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(2002)
IEEE Journal of Solid-State Circuits
, vol.37
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, pp. 1396-1402
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Tschanz, J.W.1
Kao, J.T.2
Narendra, S.G.3
Nair, R.4
Antoniadis, D.A.5
Chandrakasan, A.P.6
De, V.7
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