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Applied Physics Letters

Volumn 96, Issue 12, 2010, Pages

Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs

(8) Shao, Jun a Chen, Lu a Lu, Wei a Lü, Xiang a Zhu, Liangqing a Guo, Shaoling a He, Li a Chu, Junhao a,b

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

b EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; BACKSIDE-ILLUMINATED; CRUCIAL PARAMETERS; EPITAXIALLY GROWN; GAAS; GAAS SUBSTRATES; GROWTH DIRECTIONS; HGCDTE; IMPURITY STATE; INFRARED PHOTOLUMINESCENCE; NONUNIFORMITY; PHOTOREFLECTANCE;

ALLOYING; ARSENIC; DETECTORS; GALLIUM ARSENIDE; MERCURY COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; TELLURIUM COMPOUNDS;

GALLIUM ALLOYS;

EID: 77950326032 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3373595 Document Type: Article

Times cited : (48)

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