Evidence that arsenic is incorporated as As4 molecules in the molecular beam epitaxial growth of Hg1-xCdxTe:As

Applied Physics Letters

Volumn 74, Issue 14, 1999, Pages 1975-1977

  Garland, J W ^a   Grein, C H ^a   Yang, B ^a   Wijewarnasuriya, P S ^a   Aqariden, F ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; COMPOSITION EFFECTS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PRESSURE EFFECTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMODYNAMICS;

ELECTRICAL ACTIVATION; MERCURY CADMIUM TELLURIDE; QUASITHERMODYNAMIC MODEL; STICKING COEFFICIENT; TETRAMERS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032621368     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123718     Document Type: Article

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