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Volumn 74, Issue 5, 1999, Pages 685-687

Amphoteric behavior of arsenic in HgCdTe

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[No Author keywords available]

Indexed keywords


EID: 0001234482     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122987     Document Type: Article
Times cited : (47)

References (20)
  • 13
    • 85034554638 scopus 로고    scopus 로고
    • note
    • Although the addition of the gradient corrections to the LDA improves the prediction of the cohesive energy compared with the straight LDA results. in HgTe and CdTe the LDA + GC calculations predict an underhinding of the compounds by ≃0.04 eV per bond. To improve agreement with experimental vacancy densities, we have corrected this discrepancy with experiment by shifting the free-atom energies of the cation and anion atoms by an equal amount so as to result in the proper experimental binding energy.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.