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Applied Physics Letters

Volumn 96, Issue 12, 2010, Pages

Intrinsic limits of subthreshold slope in biased bilayer graphene transistor

(4) Majumdar, Kausik a Murali, Kota V R M b Bhat, Navakanta a Lin, Yu Ming c

a INDIAN INSTITUTE OF SCIENCE (India)

b IBM RESEARCH INDIA (India)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BI-LAYER; BOLTZMANN; EXPERIMENTAL DATA; GRAPHENE TRANSISTORS; INTRINSIC BIAS; INTRINSIC LIMIT; ROOM TEMPERATURE; SUBTHRESHOLD SLOPE; TECHNOLOGICAL IMPROVEMENTS;

ELECTRONIC STRUCTURE; GRAPHITE;

GRAPHENE;

EID: 77950310715 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3364142 Document Type: Article

Times cited : (7)

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