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Volumn 312, Issue 10, 2010, Pages 1683-1686
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A study on structural formation and optical property of wide band-gap Be0.2Zn0.8O layers grown by RF magnetron co-sputtering system
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Author keywords
A1. Characterization; A3. RF sputtering; B1. Oxides; B2. Semiconducting II VI materials
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Indexed keywords
A3. RF SPUTTERING;
B2. SEMICONDUCTING II-VI MATERIALS;
BARRIER LAYERS;
FREE EXCITONS;
HEXAGONAL STRUCTURES;
LATTICE SITES;
NEUTRAL DONOR;
QUANTUM WELL STRUCTURES;
RADIO-FREQUENCY MAGNETRON CO-SPUTTERING;
RF-MAGNETRON CO-SPUTTERING;
RF-SPUTTERING;
SEMICONDUCTING II-VI MATERIALS;
STRUCTURAL FORMATION;
TRANSMITTANCE MEASUREMENTS;
ULTRA-VIOLET;
UV LIGHT;
VISIBLE REGION;
WIDE BAND GAP;
WIDE BAND-GAP MATERIAL;
ZNO;
BINDING ENERGY;
CRYSTAL STRUCTURE;
EPITAXIAL GROWTH;
EXCITONS;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
MAGNETRONS;
OPTICAL PROPERTIES;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR QUANTUM WELLS;
STOICHIOMETRY;
SULFUR COMPOUNDS;
ZINC;
ZINC OXIDE;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 77950188347
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.02.014 Document Type: Article |
Times cited : (11)
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References (17)
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