9 kV, 1 cmx1 cm SiC super GTO technology development for pulse power

PPC2009 - 17th IEEE International Pulsed Power Conference

Volumn , Issue , 2009, Pages 264-269

  Agarwal, A ^a   Capell, C ^a   Zhang, Q ^a   Richmond, J ^a   Callanan, R ^a   O'Loughlin, M ^a   Burk, A ^a   Melcher, J ^a   Palmour, J ^a   Temple, V ^b   O'Brien, H ^c   Scozzie, C J ^c  

^a Arkansas Power Electronics International Inc   (United States)

^b Silicon Power Corp   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODE CURRENTS; BLOCKING VOLTAGE; CURRENT CAPABILITY; DEVELOPMENT HISTORY; DIE SIZE; FUTURE PERSPECTIVES; GATE CURRENT; GATE TURN-OFF THYRISTORS; HIGH TEMPERATURE; LOW-LEAKAGE CURRENT; MATERIAL PROPERTY; MATERIAL QUALITY; MULTIPLE DEVICES; PEAK CURRENTS; POWER DEVICES; PULSE POWER; PULSE POWER APPLICATIONS; PULSE WIDTH; SIC DEVICES; STATE OF THE ART; STATIC AND DYNAMIC; TECHNOLOGY DEVELOPMENT;

CARRIER LIFETIME; DEFECT DENSITY; ELECTRIC SWITCHGEAR; LEAKAGE CURRENTS; POWER ELECTRONICS; SECONDARY BATTERIES; TECHNOLOGICAL FORECASTING;

SILICON CARBIDE;

EID: 77949991200     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPC.2009.5386305     Document Type: Conference Paper

References (11)

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