Evaluation of SiC GTOs for pulse power switching

Digest of Technical Papers-IEEE International Pulsed Power Conference

Volumn , Issue , 2003, Pages 135-138

  Bayne, S B ^a   Ibitayo, D ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PULSE POWER SWITCHING; SWITCHING CURRENTS;

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC LOSSES; ELECTRIC POTENTIAL; RESISTORS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SWITCHING CIRCUITS; THERMAL CONDUCTIVITY;

THYRISTORS;

EID: 1542346041     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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7. S. B. Bayne, C. W. Tipton, C. J. Scozzie, T. Griffin, A. K. Agarwal, and J. Richmond, "High Temperature Inductive Switching of SiC GTO and Diode", Power Modulator Conference and High Voltage Workshop June 30 - July 3, 2002 Hollywood California
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