High isolation RF MEMS contact switch in V- and W-bands using two directional motions

Electronics Letters

Volumn 46, Issue 2, 2010, Pages 153-155

  Jang, Y H ^a   Lee, Y S ^a   Kim, Y K ^a   Kim, J M ^b  

^a Seoul National University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT SWITCHES; DIRECTIONAL MOTION; GLASS SUBSTRATES; HIGH ISOLATION; LATERAL MOVEMENT; MEMS SWITCHES; PARALLEL-PLATE ACTUATORS; RF CHARACTERISTICS; RF-MEMS; SILICON-ON-GLASS; SWITCH-ON; VERTICAL DIRECTION;

ELECTRIC SWITCHES; GLASS; MEMS; SUBSTRATES;

MICROELECTROMECHANICAL DEVICES;

EID: 77949986006     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.3153     Document Type: Article

References (4)

1. Katehi, L.P.B., Harvey, J.F., and Brown, E.: ' MEMS and Si micromachined circuits for high-frequency applications ', IEEE Trans. Microw. Theory Tech., 2002, 50, (3), p. 858-866 0018-9480
2. Muldavin, J.B., and Rebeiz, G.M.: ' High-isolation CPW MEMS shunt switches - Part 1: Modeling ', IEEE Trans. Microw. Theroy Tech., 2000, 48, p. 1045-1052
3. Rizk, J., and Tan, G.-L.: et al. ' High-isolation W-band MEMS switches ', Microw. Wirel. Compon. Lett., 2001, 11, p. 10-12
4. Kim, J.M., Cheon, C., Kim, Y., and Kim, Y.K.: ' A hybrid RF MEMS probe array system with a SP3T RF MEMS silicon switch for permittivity measurement ', J. Micromech. Microeng., 2008, 18, p. 085006, 6 pages 0960-1317