High-isolation W-band MEMS switches

IEEE Microwave and Wireless Components Letters

Volumn 11, Issue 1, 2001, Pages 10-12

  Rizk, J ^a   Tan, G L ^a   Muldavin, J B ^a   Rebeiz, G M ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

High isolation; Low loss; MEMS; Micromachining; Microwave; Millimeter wave; Switches

Indexed keywords

INSERTION LOSSES; MICROMACHINING; NATURAL FREQUENCIES; SILICON NITRIDE; SUBSTRATES; SWITCHES;

REFLECTION COEFFICIENT;

MICROELECTROMECHANICAL DEVICES;

EID: 0035163495     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/7260.905952     Document Type: Article

References (10)

1. Performance of low-loss RF MEMS capacitive switches
2. Surface micromachined RF MEMS switches on GaAs substrates
3. A surface micromachined miniature switch for telecommunications applications with signal frequencies from DC up to 4 GHz
4. High-isolation CPW MEMS shunt switches - Part 1: Modeling
5. High-isolation CPW MEMS shunt switches - Part II: Design
6. A 94 GHz monolithic switch with a vertical PIN diode structure
7. 77GHz high-isolation transmit/receive switch using InGaAs/InP PIN diodes
8. A high-performance W-band uniplanar subharmonic mixer
9. 2 interface layer effects on microwave loss of high-resistivity CPW line
10. Theoretical and experimental study of various types of compensated dielectric bridges for millimeter-wave coplanar applications