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Volumn , Issue , 2009, Pages 681-684

A W-band low-noise amplifier with 22K noise temperature

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; CRYOGENIC TEMPERATURES; FREQUENCY SHIFT; INP HEMT; NOISE TEMPERATURE; POWER DISSIPATION; ROOM TEMPERATURE;

EID: 77949938450     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165788     Document Type: Conference Paper
Times cited : (40)

References (8)
  • 7
    • 0024738288 scopus 로고
    • Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
    • Sep
    • M. W. Pospieszalski, "Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence," IEEE Trans. Microwave Theory & Tech., vol. 37, no. 9, pp. 1340-1350, Sep. 1989.
    • (1989) IEEE Trans. Microwave Theory & Tech , vol.37 , Issue.9 , pp. 1340-1350
    • Pospieszalski, M.W.1
  • 8
    • 27344456204 scopus 로고    scopus 로고
    • Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004
    • Sep
    • M. W. Pospieszalski, "Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004," IEEE Microwave Magazine, vol. 6, no. 3, pp. 62-75, Sep. 2005.
    • (2005) IEEE Microwave Magazine , vol.6 , Issue.3 , pp. 62-75
    • Pospieszalski, M.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.