Low noise amplifiers in InP technology for pseudo correlating millimeter wave radiometer

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1959-1962

  Kangaslahti, P ^a,b   Gaier, T ^d   Dawson, D ^d   Tuovinen, J ^c   Karttaavi, T ^c   Lahdes, M ^c   Hughes, N J ^c   Cong, T L ^b   Jukkala, P ^b   Sjoman P ^a   Weinreb, S ^d  

^a AALTO UNIVERSITY   (Finland)

^b Ylinen Electronics Ltd   (Finland)

^c VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; COMPUTER SIMULATION; ELECTRIC POWER SUPPLIES TO APPARATUS; MICROWAVES; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RADIOMETERS; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; TEMPERATURE; TRANSCONDUCTANCE; WAVEGUIDES;

COSMIC MICROWAVE BACKGROUND RADIATION; INDIUM PHOSPHIDE TECHNOLOGY; LOW NOISE AMPLIFIERS; MILLIMETER WAVE RADIOMETER;

MICROWAVE AMPLIFIERS;

EID: 0035683179     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967293     Document Type: Article

References (4)

1. An InP HEMT MMIC LNA with 7.2dB gain at 190 GHz
2. W-band InP wideband MMIC LNA with 30K noise temperature
3. A modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
4. Full band waveguide-to-microstrip probe transitions