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Volumn , Issue , 2008, Pages 451-454

Low noise amplifier for 180 GHz frequency band

Author keywords

High electron mobility transistors (HEMTs); Indium phosphide; Millimeter wave field effect transistor (FET) amplifiers; MMIC; Monolithic millimeter wave integ low noise amplifier

Indexed keywords

AMPLIFIERS (ELECTRONIC); ATMOSPHERIC HUMIDITY; AUDIO FREQUENCY AMPLIFIERS; ELECTROMAGNETIC WAVES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; FREQUENCY BANDS; INDIUM PHOSPHIDE; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MICROWAVE CIRCUITS; MICROWAVES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RESONANCE; TRANSISTORS; WEATHER FORECASTING;

EID: 57349128421     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2008.4633200     Document Type: Conference Paper
Times cited : (55)

References (6)
  • 2
    • 27844447021 scopus 로고    scopus 로고
    • 220-GHz metamorphic HEMT Amplifier MMICs for High-Resolution Imaging Applications
    • Oct
    • A. Tessmann, "220-GHz metamorphic HEMT Amplifier MMICs for High-Resolution Imaging Applications," IEEE Journal of Solid-State Circuits, Volume 40, Issue 10, Oct. 2005, pp. 2070 -2076.
    • (2005) IEEE Journal of Solid-State Circuits , vol.40 , Issue.10 , pp. 2070-2076
    • Tessmann, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.