35nm InP HEMT for millimeter and sub-millimeter wave applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 59-62

  Mei, X B ^a   Yoshida, W ^a   Deal, W ^a   Liu, P H ^a   Lee, J ^a   Uyeda, J ^a   Dang, L ^a   Wang, J ^a   Liu, W ^a   Li, D ^a   Barsky, M ^a   Kim, Y M ^a   Lange, M ^a   Chin, T P ^a   Radisic, V ^a   Gaier, T ^b   Fung, A ^b   Lai, R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; CUTOFF FREQUENCY; INDIUM PHOSPHIDE; MILLIMETER WAVES; SUBMILLIMETER WAVES; TRANSCONDUCTANCE;

CONTACT LAYER; MILLIMETER-WAVE BANDS; OHMIC METAL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748922883     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381122     Document Type: Conference Paper

References (5)

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2. A. Tessmann, "220-GHz metamorphic HEMT Amplifier MMICs for High-Resolution Imaging Applications," in IEEE Journal of Solid-State Circuits, Volume 40, Issue 10, Oct. 2005, pp. 2070 - 2076.
3. K. J. Chen, K. Maezawa, and M. Yamamoto, "High-performance InP-based enhancement-mode HEMT's using nonalloyed ohmic contacts and Pt-based buried-gate technologies," IEEE Trans. Electron Devices, vol. 43, pp. 252-257, Feb. 1996.
4. W. R. Deal, S. Din, V. Radisic, J. Padilla, X.B. Mei, W. Yoshida, P.H. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, L. Samoska, R. Lai, "Demonstration of a Sub-Millimeter Wave Integrated Circuit (S-MMIC) using InP HEMT with a 35-nm gate," 2006 IEEE CSIC Symposium Technical Digest, pp. 33-36, 2006.
5. A.K. Fung, D. Dawson, L. Samoska, K. Lee, C. Oleson, G. Boll, "On-wafer vector network analyzer measurements in the 220-325 GHz frequency band," IEEE MTT-S International Microwave Symposium Digest, June 2006, pp. 1931-1934, 2006