Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination

Infrared Physics and Technology

Volumn 52, Issue 1, 2009, Pages 52-56

  Zhang, Yonggang ^a   Gu, Yi ^a   Tian, Zhaobing ^a   Li, Aizhen ^a   Zhu, Xiangrong ^a   Wang, Kai ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

III V compounds; Molecular beam epitaxy; Photodetectors; Short wavelength infrared

Indexed keywords

BUFFER LAYERS; CRYSTAL GROWTH; DOPING (ADDITIVES); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; STRUCTURAL OPTIMIZATION; VANADIUM COMPOUNDS;

BACK ILLUMINATIONS; BLACK BODIES; CURRENT PERFORMANCES; CUTOFF WAVELENGTHS; GAS SOURCES; GRADED BUFFERS; HETEROJUNCTION STRUCTURES; III-V COMPOUNDS; PARAMETER OPTIMIZATIONS; REVERSE BIASES; ROOM TEMPERATURES; SHORT WAVELENGTH INFRARED; STRUCTURE QUALITIES; WIDE TEMPERATURE RANGES;

WAVELENGTH;

EID: 58349117219     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2008.12.001     Document Type: Article

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