Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions

Journal of Applied Physics

Volumn 79, Issue 11, 1996, Pages 8465-8469

  Greally, M G ^a   Hayne, M ^a,c   Usher, A ^a   Hill, G ^b   Hopkinson, M ^b  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041098821     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362481     Document Type: Review

References (24)

1. T. Enoki, M. Tomizawa, Y. Umeda, and Y. Ishii, Jpn. J. Appl. Phys. 33, 798 (1994), and references therein.
2. P. Bourel, J. L. Thobel, K. Bellahsni, M. Pernisek, and R. Fauquembergue, J. Phys. III (Paris) 1, 511 (1991), and references therein.
3. K. Y. Cheng and A. Y. Cho, Appl. Phys. Lett. 40, 147 (1982).
4. A. Kastalsky, R. Dingle, K. Y. Cheng, and A. Y. Cho, Appl. Phys. Lett. 41, 274 (1982).
5. P. K. Basu and B. R. Nag, Appl. Phys. Lett. 43, 689 (1983).
6. N. Holonyak, Jr., W. D. Laidig, M. D. Camras, H. Morkoç, T. J. Drummond, K. Hess, and M. S. Burroughs, J. Appl. Phys. 52, 7201 (1981).
7. F. Oosaka, T. Sugano, Y. Okabe, and Y. Okada, Jpn. J. Appl. Phys. 15, 2371 (1976).
8. J. H. Marsh, Appl. Phys. Lett. 41, 732 (1982).
9. Y. Takeda and A. Sasaki, Jpn. J. Appl. Phys. 24, 1307 (1985).
10. K. Nakashima, S. Nojima, Y. Kawamura, and H. Asahi, Phys. Status Solidi A 103, 511 (1987).
11. P. M. Mooney, J. Appl. Phys. 67, 3 (1990).
12. E. Calleja, A. L. Romero, S. F. de Avila, E. Muñoz, and J. Castagné, Semicond. Sci. Technol. 8, 206 (1993).
13. D. J. Chadi and K. J. Chang, Phys. Rev. Lett. 61, 873 (1988).
14. G. Guillot, G. Bremond, T. Benyattou, F. Ducroquet, B. Wirth, M. Colombet, A. Louati, and A. Bencherifa, Semicond. Sci. Technol. 5, 391 (1990).
15. A. S. Brown, L. D. Nguyen, R. A. Metzger, A. E. Schmitz, and J. A. Henige, J. Vac. Sci. Technol. B 10, 1017 (1992), and references therein.
16. F. F. Fang and W. E. Howard, Phys. Rev. Lett. 16, 797 (1966).
17. F. Stern, Phys. Rev. B 5, 4891 (1972).
18. G. Bastard, Surf. Sci. 142, 284 (1984), and references therein.
19. J. R. Hayes, A. R. Adams, and P. D. Greene, in GaInAsP Alloy Semiconductors, edited by T. P. Pearsall (Wiley New York, 1982) p. 189.
20. J. J. Harris, J. A. Pals, and R. Woltjer, Rep. Prog. Phys. 52, 1217 (1989).
21. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
22. T. Ando, J. Phys. Soc. Jpn. 51, 3900 (1982).
23. W. Walukiewicz, H. E. Ruda, J. Lagowski, and H. C. Gatos, Phys. Rev. B 30, 4571 (1984).
24. J. C. Portal, R. J. Nicholas, M. A. Brummell, A. Y. Cho, K. Y. Cheng, and T. P. Pearsall, Solid-State Commun. 43, 902 (1982), and references therein.