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Applied Physics Letters

Volumn 96, Issue 3, 2010, Pages

Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy

(5) Lei, W a,b Notthoff, C a Lorke, A a Reuter, D c Wieck, A D c

a UNIVERSITY OF DUISBURG ESSEN (Germany)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

c RUHR UNIVERSITY BOCHUM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE SPECTROSCOPY; CHARGING ENERGIES; GAAS; GROUND STATE TRANSITION; INGAAS/GAAS; MATRIX; NUMERICAL SIMULATION; QUANTUM RING; SELF-ASSEMBLED;

COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; GROUND STATE; NANORINGS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

CAPACITANCE;

EID: 77949817838 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3293445 Document Type: Article

Times cited : (20)

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- A 1.2 nm In0.38 Ga0.62 As was chosen as the InAs WL to reproduce the 0.9 V gate voltage difference between the charging of the WL and the 2DEG in the 1D Poisson/Schrödinger simulation.
- A 1.2 nm In0.38 Ga0.62 As was chosen as the InAs WL to reproduce the 0.9 V gate voltage difference between the charging of the WL and the 2DEG in the 1D Poisson/Schrödinger simulation.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.