SCOPUS 정보 검색 플랫폼

Volumn 16, Issue 5, 2005, Pages

Determination of the energy levels on InAs quantum dots with respect to the GaAs conduction band

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRON ENERGY LEVELS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CAPACITANCE-VOLTAGE SPECTROSCOPY; CONDUCTION BAND EDGE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 24144477898 PISSN: 09574484 EISSN: None Source Type: Journal
DOI: 10.1088/0957-4484/16/5/027 Document Type: Conference Paper

Times cited : (16)

References (8)

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2
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- Electron and hole energy levels in InAs self-assembled quantum dots
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- Medeiros-Ribeiro, G.¹ Leonard, D.² Petroff, P.M.³

3
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4
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- Optical emission from a charge-tunable quantum ring
- Warburton R J, Schäflein C, Haft D, Bickel F, Lorke A, Karrai K, García J M, Schoenfeld W and Petroff P M 2000 Optical emission from a charge-tunable quantum ring Nature 405 926-9
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5
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- Valence-band structure of self-assembled InAs quantum dots studied by capacitance spectroscopy
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6
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- Coulomb interactions in small charge-tunable quantum dots: A simple model
- Warburton R J, Miller B T, Dürr C S, Bödefeld C, Karrai K, Kotthaus J P, Medeiros-Ribeiro G, Petroff P M and Huant S 1998 Coulomb interactions in small charge-tunable quantum dots: a simple model Phys. Rev. B 58 16221
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7
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- In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.