Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix

Applied Physics Letters

Volumn 90, Issue 10, 2007, Pages

  Lei, W ^a,b   Wang, Y L ^a,c   Chen, Y H ^a   Jin, P ^a   Ye, X L ^a   Xu, B ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

^c Beijing Tongmei Xtal Technology Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM COMPOUNDS; LIGHT MEASUREMENT; NUCLEATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY;

PHOTOLUMINESCENCE INTENSITY; PHOTOLUMINESCENCE MEASUREMENTS; SELF ORGANIZED GROWTH; SUBSTRATE MISORIENTATION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33947149265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2711778     Document Type: Article

References (18)

1. For a review, see D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, New York, 1999).
2. J. S. Kim, J. H. Lee, S. U. Hong, W. S. Han, H.-S. Kwack, C. W. Lee, and D. K. Oh, Appl. Phys. Lett. 85, 1033 (2004).
3. F. Fossard, F. H. Julien, E. Ṕronne, A. Alexandrou, J. Brault, and M. Gendry, Infrared Phys. Technol. 42, 443 (2001).
4. E. Finkman, S. Maimon, V. Immer, G. Bahir, S. E. Schacham, F. Fossard, F. H. Julien, J. Brault, and M. Gendry, Phys. Rev. B 63, 045323 (2001).
5. E. Dupuy, P. Regreny, Y. Robach, M. Gendry, N. Chauvin, E. Tranvouez, G. Bremond, C. Bru-Chevallier, and G. Patriarche, Appl. Phys. Lett. 89, 123112 (2006).
6. Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995).
7. J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).
8. O. Bierwagen and W. T. Masselink, Appl. Phys. Lett. 86, 113110 (2005).
9. X. B. Zhang, R. D. Heller, M. S. Noh, R. D. Dupuis, G. Walter, and N. Holonyak, Jr., Appl. Phys. Lett. 83, 476 (2003).
10. B. Salem, J. Olivares, G. Guillot, G. Bremond, J. Brault, C. Monat, M. Gendry, G. Hollinger, F. Hassen, and H. Maaref, Appl. Phys. Lett. 79, 4435 (2001).
11. V. P. Evtikhiev, A. M. Boiko, I. V. Kudryashov, A. K. Kryganovskii, R. A. Suris, A. N. Titkov, and V. E. Tokranov, Semicond. Sci. Technol. 17, 545 (2002).
12. F. A. Zhao, Y. H. Chen, X. L. Ye, P. Jin, B. Xu, Z. G. Wang, and C. L. Zhang, J. Phys.: Condens. Matter 16, 7603 (2004).
13. J. Brault, M. Gendry, O. Marty, M. Pitaval, J. Olvares, G. Grenet, and G. Hollinger, Appl. Surf. Sci. 162/163, 584 (2000).
14. W. Lei, Y. H. Chen, P. Jin, X. L. Ye, Y. L. Wang, B. Xu, and Z. G. Wang, Appl. Phys. Lett. 88, 063114 (2006).
15. J. Brault, M. Gendry, G. Grenet, G. Hollinger, J. Olivares, B. Salem, T. Benyattou, and G. Bremond, J. Appl. Phys. 92, 506 (2002).
16. B. H. Koo, T. Hanada, H. Makino, and T. Yao, Appl. Phys. Lett. 79, 4331 (2001).
17. Y. L. Wang, P. Jin, X. L. Ye, C. L. Zhang, G. X. Shi, R. Y. Li, Y. H. Chen, and Z. G. Wang, Appl. Phys. Lett. 88, 123104 (2006).
18. Zh. M. Wang, Sh. Seydmohamadi, J. H. Lee, and G. J. Salamo, Appl. Phys. Lett. 85, 5031 (2004).