Valence-band structure of self-assembled inas quantum dots studied by capacitance spectroscopy

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2071-2073

  Bock, C ^a   Schmidt, K H ^a   Kunze, U ^a   Malzer, S ^b   Dohler G H ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; GROUND STATE; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

CAPACITANCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037475005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564288     Document Type: Article

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