Thermoelectric-transport in metal/graphene/metal hetero-structure

Chinese Physics B

Volumn 19, Issue 3, 2010, Pages

  Hu, Hao ^a   Cai, Jin Ming ^a   Zhang, Chen Dong ^a   Gao, Min ^a   Pan, Yi ^a   Du, Shi Xuan ^a   Sun, Qing Feng ^a   Niu, Qian ^b   Xie, Xin Cheng ^a,c   Gao, Hong Jun ^a  

^a INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

Graphene; Hetero structure; LandauerButticker formula; Thermoelectricity

Indexed keywords

ELECTRON MOTION; ELECTRONIC BAND STRUCTURE; HETERO-STRUCTURE; LANDAUER; METAL ELECTRODES; P-TYPE; SINGLE BAND; THERMOELECTRIC POTENTIAL; TIGHT BINDING MODEL;

ELECTRODES; GRAPHITE; THERMAL GRADIENTS; THERMOANALYSIS; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 77949754519     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/3/037202     Document Type: Article

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