Impact of oxide trap charge on performance of strained fully depleted SOI metal-gate MOSFET

2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

Volumn , Issue , 2009, Pages 197-200

  Yeh, W K ^a   Wang, C C ^a   Hsu, C W ^b   Fang, Y K ^b   Wu, S M ^a   Ou, C C ^a   Lin, C L ^c   Gan, K J ^d   Weng, C J ^e   Chen, P Y ^f   Yuan, J S ^g   Liou, J J ^g  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

^d NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^e LEADER UNIVERSITY   (Taiwan)

^f I SHOU UNIVERSITY   (Taiwan)

^g University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK OXIDE TRAPS; CHANNEL MOBILITY; CHARGE PUMPING TECHNIQUE; CMOSFETS; DEVICE DEGRADATION; ETCH STOP; FULLY DEPLETED; FULLY DEPLETED SOI; GATE OXIDE FILMS; INTERFACE TRAP CHARGE; METAL-GATE; MOS-FET; NET STRESS; NITRIDE OXIDE; OXIDE TRAP CHARGE; OXIDE TRAPS; SOI DEVICES; STRAINED-SOI; STRESS-INDUCED; ULTRA-THIN; VARIABLE FREQUENCIES;

ELECTRIC CONVERTERS; MOSFET DEVICES; OXIDE FILMS; SILICON NITRIDE; SILICON ON INSULATOR TECHNOLOGY;

SOLID STATE DEVICES;

EID: 77949630255     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2009.5394288     Document Type: Conference Paper

References (20)

1. S.Pidin et. al, IEDM,2004, pp.213-216.
2. S.S Chung et. al, IEDM., 2008, pp.435-438
3. Steegen et al, Mater.Sci.Eng., vol.38,no.1, pp.1-53,June.4,2002.
4. P. Ranade et. al, IEDM., pp.217-220,2005.
5. D.Aime et. al, IEDM,2004,pp.87-90
6. P. D. Kirsch et. al, IEDM. 2006, pp 1-4.
7. W. H. Choi et. al, IEDM., 2008, pp.112-114.
8. K. I. Seo et. al, EDL., pp 821-823.
9. M. Sato et. al, VLSI Symp. Dig., 2008, pp.66-67. [
10. C. Claeys et al., SSE, 52, 1115-1126 (2008).
11. S. M. Hu, et al J. Appl. Phys., 70, 1991, p4009.
12. Uchida, Ken et al, J. Appl. Phys. Vol 102, pp. 510-508, 2007.
13. M. Mastrapasqua et. al, Microelectronic Eng. 59, pp. 409-416. 2001.
14. Yi Zhao et al. IEDM Tech. Dig., pp.577-580, 2008.
15. C. T. Lin et al. IEEE EDL, vol.27, pp.963-965, Dec 2007.
16. W. J. Zhu, et al. EDL, vol.25, pp.89-91, Feb 2004.
17. T. Komoda, et al, IEDM Tech. Dig., pp.217-220,2004
18. W. K. Yeh et al. IEEE T-DMR, no.1, pp.74-79, March, 2009.
19. Z. C. Butler, et al, S. S. E, pp.419-423, 1987.
20. W. T. Chiang et al. IEDM Tech. Dig., pp.1-2, 2007.