Silver joints between silicon chips and copper substrates made by direct bonding at low-temperature

IEEE Transactions on Components and Packaging Technologies

Volumn 33, Issue 1, 2010, Pages 10-15

  Wang, Pin J ^a   Lee, Chin C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Bonding; Direct bonding; Electronic packaging; Silver; Silver joints

Indexed keywords

BONDING INTERFACES; BONDING MEDIUM; BONDING PROCESS; BONDING STRENGTH; BONDING TEMPERATURES; COEFFICIENT OF THERMAL EXPANSION; COPPER SUBSTRATES; CU SUBSTRATE; DIRECT BONDING; ELECTRICAL CONDUCTIVITY; ELECTRONIC DEVICE; ELECTRONIC INDUSTRIES; ELECTRONIC PACKAGING; HIGH TEMPERATURE; HIGH-TEMPERATURE DEVICES; INTER-DIFFUSION; INTERCONNECT MATERIALS; LOW TEMPERATURES; LOW-YIELD; MOLTEN PHASE; ONE STEP; OPERATION TEMPERATURE; REFLOW TEMPERATURES; SI CHIPS; SILICON CHIP; SN3.5AG SOLDER; THERMAL PERFORMANCE; VACUUM ENVIRONMENT;

CHIP SCALE PACKAGES; CHROMIUM; ELECTRIC CONDUCTIVITY; MELTING POINT; ORGANIC POLYMERS; PHASE INTERFACES; SILICON; SMELTING; SUBSTRATES; THERMAL EXPANSION;

SILVER;

EID: 77949570891     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2009.2031631     Document Type: Article

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