Donor bound excitons confined in a GaN / Ga1 - x Alx N quantum dot

Solid State Communications

Volumn 150, Issue 17-18, 2010, Pages 816-819

  Revathi, M ^a   John Peter, A ^a  

^a MADURAI KAMARAJ UNIVERSITY   (India)

Author keywords

A. Donor bound excitons; A. Quantum dot

Indexed keywords

AL-CONCENTRATION; CYLINDRICAL QUANTUM DOT; DIELECTRIC SCREENING; DONOR-BOUND EXCITON; EFFECTIVE MASS APPROXIMATION; EXCITON STATE; EXCITON-BINDING ENERGY; INTERBAND; INTERBAND EMISSIONS; QUANTUM DOT; QUANTUM SIZE; SINGLE BAND; SPATIAL DIRECTION; STRUCTURAL PARAMETER; THEORETICAL MODELS;

ALUMINUM; BINDING ENERGY; EXCITONS; GALLIUM NITRIDE; GROUND STATE; NUCLEAR ENERGY; OPTICAL TRANSITIONS; POTENTIAL ENERGY; QUANTUM THEORY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77949489036     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.02.014     Document Type: Article

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