Electronic structure and optical properties of GaN-Ga0.7Al0.3N quantum wells along the [0 0 0 1] direction

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 119-123

  Bigenwald, Pierre ^a   Christol, Philippe ^a   Alemu, Andenet ^b   Gil, Bernard ^b  

^a UAPV   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Dipolar matrix element; Exciton binding energies; GaN (Al,Ga)N SQW; Optical absorption

Indexed keywords

ABSORPTION SPECTROSCOPY; BINDING ENERGY; CRYSTAL ORIENTATION; ELECTRONIC STRUCTURE; EXCITONS; LIGHT ABSORPTION; LIGHT POLARIZATION; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DIPOLAR MATRIX ELEMENTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032092393     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00185-7     Document Type: Article

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