Quantum size effect on excitons in zinc-blende GaN/AlN quantum dot

Microelectronics Journal

Volumn 37, Issue 11, 2006, Pages 1408-1411

  Xia, C X ^a   Wei, S Y ^a  

^a HENAN NORMAL UNIVERSITY   (China)

Author keywords

Exciton; Quantum dot

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; BINDING ENERGY; ELECTRONS; GALLIUM NITRIDE; QUANTUM THEORY; SEMICONDUCTOR QUANTUM DOTS;

EXCITON STATES; FINITE BAND OFFSETS; MASS APPROXIMATION;

EXCITONS;

EID: 33750610862     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.06.013     Document Type: Article

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