On the gain mechanism in GaN based laser diodes

Solid State Communications

Volumn 108, Issue 2, 1998, Pages 105-109

  Mohs, G ^a   Aoki, T ^a   Shimano, R ^a   Kuwata Gonokami, M ^a   Nakamura, S ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

A. semiconductors; D. optical properties; E. nonlinear optics

Indexed keywords

AMPLIFICATION; LIGHT ABSORPTION; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT MEASUREMENT; NONLINEAR OPTICS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTING GALLIUM COMPOUNDS; TWO DIMENSIONAL;

GAIN SPECTRA; GALLIUM NITRIDE; OPTICAL NANOSECOND EXCITATION;

SEMICONDUCTOR LASERS;

EID: 0032136789     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00309-3     Document Type: Article

References (15)

1. Second International Conference on Nitride Semi-conductors, ICNS'97, October 27-31. Tokushima, Japan, 1997.
2. Satake, A., Masumoto, Y., Miyajima, T., Asatsunma, T., Nakamura, F. and Ikeda, M., Phys. Rev., B57, 1998, R2401; Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., 70, 1997, 2822; Narukawa, Y., Kawakami, Y., Fujita, S. and Fujita, S., Phys. Rev., B55, 1997, R1938; Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., 69, 1996, 4188.
3. Satake, A., Masumoto, Y., Miyajima, T., Asatsunma, T., Nakamura, F. and Ikeda, M., Phys. Rev., B57, 1998, R2401; Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., 70, 1997, 2822; Narukawa, Y., Kawakami, Y., Fujita, S. and Fujita, S., Phys. Rev., B55, 1997, R1938; Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., 69, 1996, 4188.
4. Satake, A., Masumoto, Y., Miyajima, T., Asatsunma, T., Nakamura, F. and Ikeda, M., Phys. Rev., B57, 1998, R2401; Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., 70, 1997, 2822; Narukawa, Y., Kawakami, Y., Fujita, S. and Fujita, S., Phys. Rev., B55, 1997, R1938; Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., 69, 1996, 4188.
5. Satake, A., Masumoto, Y., Miyajima, T., Asatsunma, T., Nakamura, F. and Ikeda, M., Phys. Rev., B57, 1998, R2401; Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., 70, 1997, 2822; Narukawa, Y., Kawakami, Y., Fujita, S. and Fujita, S., Phys. Rev., B55, 1997, R1938; Chichibu, S., Azuhata, T., Sota, T. and Nakamura, S., Appl. Phys. Lett., 69, 1996, 4188.
6. Narukawa, Y., Kawakami, Y., Funatod, M., Fujita, S., Fujita, S. and Nakamura, S., Phys. Lett., 70, 1997, 981.
7. Mohs, G., Aoki, T., Nagai, M., Shimano, R., Kuwato-Gonokami, M. and Nakamura, S., Solid State Commun., 104, 1997, 643.
8. Nakamura, S., MRS Internet. J. Semicond. Res., 2, 1997, 5.
9. Shaklee, K.L. and Leheny, R.F., Appl. Phys. Lett., 18, 1971, 475.
10. See for example: Hecht, E. and Zajac, A., Optics. Addison-Wesley Publishing Company, Inc., Reading, Massachusetts, 1990.
11. New Series of the Landolt-Börnstein data handbook, Springer Verlag.
12. Barker, A.S. and Ilegems, M., Phys. Rev., B7, 1973, 743.
13. Foley, C.P. and Tansley, T.L., Phys. Rev., B33, 1986, 1430.
14. See for example: Peyghambrian, N., Koch, S.W. and Mysyrowicz, A., Introduction to Semiconductor Optics, pp. 198. Prentice Hall, Engleweood Cliffs, New Jersey 07632, 1993.
15. Aoki, T., Mohs, G., Ogasawara, T., Shimano, R. and Kuwata-Gonokami, M., Opt. Exp., 1, 1997, 364.