n-Type multicrystalline silicon wafers prepared from plasma torch refined upgraded metallurgical feedstock

Progress in Photovoltaics: Research and Applications

Volumn 17, Issue 5, 2009, Pages 297-305

  Martinuzzi, S ^a   Perichaud I ^a   Trassy, C ^b   Degoulange, J ^b  

^a AIX MARSEILLE UNIVERSITY   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

Metallurgical feedstock; Minority carrier diffusion length; n type multicrystalline silicon

Indexed keywords

CAPTURE CROSS SECTIONS; CRYSTALLOGRAPHIC DEFECTS; DOPING ELEMENTS; GETTERING TREATMENTS; METALLIC IMPURITY; METALLURGICAL FEEDSTOCK; MINORITY CARRIER; MINORITY CARRIER DIFFUSION LENGTH; MULTICRYSTALLINE SILICON (MC-SI); MULTICRYSTALLINE SILICON WAFERS; N TYPE SILICON; N-TYPE MULTICRYSTALLINE SILICON; P-TYPE; P-TYPE WAFER; PHOTOVOLTAIC INDUSTRY; PROCESSING STEPS; RECOMBINATION CENTRES; SEGREGATION COEFFICIENTS; SILICON FEEDSTOCKS;

BORON; BORON COMPOUNDS; DIFFUSION; FEEDSTOCKS; INGOTS; METALLURGY; PHOSPHORUS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 67650113051     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.883     Document Type: Article

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