Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate

Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

  Zhao, Wei ^a   Wang, Ru Zhi ^a,b   Song, Xue Mei ^a   Wang, Hao ^a   Wang, Bo ^a   Yan, Hui ^a   Chu, Paul K ^b  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC ELECTRON TRANSPORT; EMISSION ENHANCEMENT; FIELD EMISSION MEASUREMENTS; GAN FILM; NANO-STRUCTURED; POLARIZATION FIELD; SI SUBSTRATES; STABLE EMISSIONS; THRESHOLD FIELDS; ULTRA-LOW THRESHOLD;

CARBON NANOTUBES; FIELD EMISSION; GALLIUM NITRIDE; SUBSTRATES;

GALLIUM ALLOYS;

EID: 77949412627     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3352556     Document Type: Article

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