Field emission enhancement by the quantum structure in an ultrathin multilayer planar cold cathode

Applied Physics Letters

Volumn 92, Issue 14, 2008, Pages

  Wang, R Z ^a   Yan, H ^a   Wang, B ^a   Zhang, X W ^b   Hou, X Y ^c  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; FIELD EMISSION CATHODES; MULTILAYER FILMS; SEMICONDUCTOR QUANTUM WELLS; ULTRATHIN FILMS;

FIELD ELECTRON EMISSION; FIELD EMISSION ENHANCEMENT; QUANTUM WELL STRUCTURE; ULTRATHIN MULTILAYER PLANAR COLD CATHODE;

COLD CATHODE TUBES;

EID: 42149093843     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2908046     Document Type: Article

References (17)

1. N. S. Xu and S. Ejaz Huq, Mater. Sci. Eng., R. 48, 47 (2005).
2. M. W. Geis, J. C. T. Wichell, and T. M. Lyszczarz, Lincoln Lab. J. 8, 161 (1995).
3. M. W. Geis, N. N. Efremow, K. E. Krohn, J. C. Twichell, T. M. Lyszczarz, R. Kallish, J. A. Greer, and M. D. Tabat, Nature (London) 393, 431 (1998).
4. V. T. Binh and C. Adessi, Phys. Rev. Lett. 85, 864 (2000).
5. L. Gan, E. Baskin, C. Saguy, and R. Kalish, Phys. Rev. Lett. 96, 196808 (2006).
6. B. Li, T. C. Leung, and C. T. Chan, Phys. Rev. Lett. 97, 087201 (2006).
7. Q. A. Huang, Appl. Surf. Sci. 93, 77 (1996).
8. V. Litovchenko, A. Evtukh, Y. Kryuchenko, N. Goncharuk, O. Yilmazoglu, K. Mutamba, H. L. Hartnagel, and D. Pavlidis, J. Appl. Phys. 96, 867 (2004).
9. R. Z. Wang, X. M. Ding, B. Wang, K. Xue, J. B. Xu, H. Yan, and X. Y. Hou, Phys. Rev. B 72, 125310 (2005).
10. R. Z. Wang, X. M. Ding, K. Xue, B. L. Zhao, H. Yan, and X. Y. Hou, Phys. Rev. B 70, 195305 (2004).
11. V. Semet, V. Th. Binh, J. P. Zhang, J. Yang, M. Asif Khan, and R. Tsu, Appl. Phys. Lett. 84, 1937 (2004).
12. O. Madelung, Semiconductors: Group IV Elements and III-V Compounds (Data in Science and Technology) (Springer, Berlin, 1991).
13. R. Z. Wang and X. H. Yan, Chin. Phys. Lett. 17, 598 (2000).
14. R. Z. Wang, B. Wang, H. Wang, H. Zhou, A. P. Huang, M. K. Zhu, and H. Yan, Appl. Phys. Lett. 81, 2782 (2002).
15. S. Chung, N. M. Miskovsky, P. H. Clutler, and N. Kumar, Appl. Phys. Lett. 76, 1143 (2000).
16. S. Vatannia, G. Gildenblat, and J. Schiano, J. Appl. Phys. 82, 902 (1997).
17. P. J. Price, IEEE Trans. Electron Devices 36, 2340 (1989).