Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

Applied Physics Letters

Volumn 96, Issue 9, 2010, Pages

  Hofstetter, Markus ^a   Howgate, John ^b   Sharp, Ian D ^b   Funk, Maren ^a   Stutzmann, Martin ^b   Paretzke, Herwig G ^a   Thalhammer, Stefan ^a  

^a INSTITUTE OF EPIDEMIOLOGY   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BIOSENSING APPLICATIONS; INTEGRATED RESPONSE; PH RESPONSE; PH SENSITIVE; RADIATION DOSIMETRY; REPRODUCIBLE BEHAVIOR; X RAY IRRADIATION; X RAY RADIATION;

DOSIMETRY; ELECTRON MOBILITY; GALLIUM NITRIDE; IRRADIATION; PH SENSORS; RADIATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77949407097     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3334682     Document Type: Article

References (13)

1. G. Steinhoff, O. Purrucker, M. Tanaka, M. Stutzmann, and M. Eickhoff, Adv. Funct. Mater. AFMDC6 1616-301X 13, 841 (2003). 10.1002/adfm.200304397
2. G. Steinhoff, B. Baur, G. Wrobel, S. Ingebrandt, A. Offenhäusser, A. Dadgar, A. Krost, M. Stutzmann, and M. Eickhoff, Appl. Phys. Lett. APPLAB 0003-6951 86, 033901 (2005). 10.1063/1.1853531
3. G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann, and M. Eickhoff, Appl. Phys. Lett. APPLAB 0003-6951 83, 177 (2003). 10.1063/1.1589188
4. M. Eickhoff, J. Schalwig, G. Steinhoff, O. Weidemann, L. Görgens, R. Neuberger, M. Hermann, B. Baur, G. Müller, O. Ambacher, and M. Stutzmann, Phys. Status Solidi C ZZZZZZ 1610-1634 0, 1908 (2003). 10.1002/pssc.200303139
5. R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Ambacher, and M. Stutzmann, J. Appl. Phys. JAPIAU 0021-8979 87, 3375 (2000). 10.1063/1.372353
6. M. J. Murphy, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, J. Silcox, R. Dimitrov, and M. Stutzmann, Appl. Phys. Lett. APPLAB 0003-6951 75, 3653 (1999). 10.1063/1.125418
7. T. T. Yoshizumi, P. C. Goodman, D. P. Frush, G. Nguyen, G. Toncheva, M. Sarder, and L. Barnes, AJR Am. J. Roentgenol. 188, 1332 (2007). 10.2214/AJR.06.0742 0361-803X
8. D. J. Peet and M. D. Pryor, Br. J. Radiol. BJRAAP 0007-1285 72, 562 (1999).
9. D. J. Brenner, Med. Phys. MPHYA6 0094-2405 32, 3225 (2005). 10.1118/1.2040747
10. C. F. Chuang, L. J. Verhey, and P. Xia, Med. Phys. MPHYA6 0094-2405 29, 1109 (2002). 10.1118/1.1481520
11. D. E. Yates, S. Levine, and T. W. Healy, J. Chem. Soc., Faraday Trans. 1 JCFTAR 0300-9599 70, 1807 (1974). 10.1039/f19747001807
12. L. Bousse, N. F. De Rooij, and P. Bergveld, IEEE Trans. Electron Devices IETDAI 0018-9383 30, 1263 (1983). 10.1109/T-ED.1983.21284
13. C. D. Fung, P. W. Cheung, and W. H. Ko, IEEE Trans. Electron Devices IETDAI 0018-9383 33, 8 (1986). 10.1109/T-ED.1986.22429