Electrical characteristics of core-shell p-n GaAs nanowire structures with Te as the n-dopant

Nanotechnology

Volumn 21, Issue 13, 2010, Pages

  Caram, J ^a   Sandoval, C ^a   Tirado, M ^a   Comedi, D ^a,b   Czaban, J ^c   Thompson, D A ^c   Lapierre, R R ^c  

^a UNIVERSIDAD NACIONAL DE TUCUMÁN   (Argentina)

^b Facultad de Ciencias Naturales e Instituto M Lillo   (Argentina)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COAXIAL GEOMETRY; CORE-SHELL; ELECTRICAL CHARACTERISTIC; FREQUENCY DISPERSION; FREQUENCY INDEPENDENT; FREQUENCY RANGES; GAAS; GAAS SURFACES; HOPPING TRANSPORT; IMPEDANCE DATA; IMPEDANCE SPECTROSCOPY; LARGE N; LOCALIZED STATE; LOW BIAS; NANOWIRE STRUCTURES; OVERLAP REGION; P-N JUNCTION; PHOTOVOLTAIC DEVICES; RE-EMISSION; RELAXATION FREQUENCY; SPATIAL DISTRIBUTION;

ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM ARSENIDE; NANOWIRES; SEMICONDUCTOR JUNCTIONS; TELLURIUM COMPOUNDS;

SEMICONDUCTING GALLIUM;

EID: 77949397753     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/13/134007     Document Type: Article

References (22)

1. Czaban J A, Thompson D A and LaPierre R R 2009 Nano Lett. 9 148
2. Kayes B M, Atwater H A and Lewis N S 2005 J. Appl. Phys. 97 114302
3. Hu L and Chen G 2007 Nano Lett. 7 3249
4. Diedenhofen S L, Vecchi G, Algra R E, Hartsuiker A, Muskens O L, Immink G, Bakkers E P A M, Vos W A and Rivas J G 2009 Adv. Mater. 21 1
5. Muskens O L, Diedenhofen S L, Kaas B C, Algra R E, Bakkers E P A M, Rivas J G and Lagendijk A 2009 Nano Lett. 9 930
6. Muskens O L, Rivas J G, Algra R E, Bakkers E P A M and Lagendijk A 2008 Nano Lett. 8 2638
7. Green M A 2006 Third Generation Photovoltaics: Advanced Solar Energy Conversion (Berlin: Springer)
8. Tian B, Kempa T J and Lieber C M 2009 Chem. Soc. Rev. 38 16
9. Piccin M, et al. 2007 Physica E 37 134
10. Plante M C and LaPierre R R 2008 Nanotechnology 19 495603
11. Plante M C and LaPierre R R 2008 J. Cryst. Growth 310 356
12. Chua C L, Thornton R L, Treat D W, Yang V K and Dunnrowicz C C 1977 IEEE Photon. Technol. Lett. 9 551
13. Cole K S and Cole R H 1941 J. Chem. Phys. 9 341
14. Sze S M 1981 The Physics of Semiconductor Devices 2nd edn (Singapore: Wiley)
15. http://www.comsol.com/ - ref-separator -
16. Natarajan K, Ramkumar K and Satyam M 1989 Phys. Status Solidi a 111 K269
17. Li Z and Kraner H W 1991 IEEE Trans. Nucl. Sci. 38 244
18. Parkinson P, Lloyd-Hughes J, Gao Q, Hoe Tan H, Jagadish C, Johnston M B and Herz L 2007 Nano Lett. 7 2162
19. Brammertz G, et al. 2008 J. Electrochem. Soc. 155 H945
20. See, for example Gudmunsson J T, Svavarsson H G, Gudjonsson S and Gislason H P 2003 Physica B 340-342 324
21. Balakrishnan V R, Jumar V and Ghosh S 1998 Semicond. Sci. Technol. 13 1094
22. Breitenstein O, Altermatt P, Ramspeck K and Schenk A 2006 Proc. 21st European Photovoltaic Solar Energy Conf. ed J Poortmans, H Ossenbrink, E Dunlop and P Helm (Munich: WIP) pp625-8