Continuous hydrothermal synthesis of nickel oxide nanoplates and their use as nanoinks for p-type channel material in a bottom-gate field-effect transistor

Nanotechnology

Volumn 21, Issue 13, 2010, Pages

  Takami, Seiichi ^a,b   Hayakawa, Ryoma ^a   Wakayama, Yutaka ^a   Chikyow, Toyohiro ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; DROP-CAST; ELECTRONIC DEVICE; FLOW-TYPE REACTOR; GATE FIELD; HYDROTHERMAL REACTION; LATERAL SIZES; METAL OXIDE NANOMATERIALS; NANOINKS; NANOPLATES; P TYPE SEMICONDUCTOR; P-TYPE;

FIELD EFFECT TRANSISTORS; METAL REFINING; METALLIC COMPOUNDS; NANOSTRUCTURES; NICKEL ALLOYS; NICKEL OXIDE;

HYDROTHERMAL SYNTHESIS;

EID: 77949350991     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/13/134009     Document Type: Article

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