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Volumn 81, Issue 2, 2010, Pages

Strain sensing with submicron Al- AlOx -Al tunnel junctions

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED STRAIN; ATOMIC FORCE MICROSCOPES; GAUGE FACTORS; LOCAL STRAINS; MASS SENSING; NANO ELECTROMECHANICAL SYSTEMS; SILICON NITRIDE MEMBRANE; STATIC STRAIN; STRAIN SENSING; STRAIN SENSORS; SUBMICRON; TUNNELING RESISTANCE;

EID: 77949308980     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3298582     Document Type: Conference Paper
Times cited : (3)

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    • AlOx barrier could not be included in the computation due to computer memory limitations. However, we estimate that its contribution is small. Material parameters used in the simulations were taken from Ref., with Young's modulus E=357 GPa and Poisson ratio =0.25 for SiN, and E=70 GPa and =0.35 for amorphous Al. Simulations were performed using commercial software COMSOL MULTIPHYSICS from Comsol AB
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.