Evidence of trapping levels and photoelectric properties of Cu3BiS3 thin films

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 5227-5230

  Mesa, F ^a   Dussan, A ^a   Gordillo, G ^a  

^a UNIVERSIDAD NACIONAL DE COLOMBIA   (Colombia)

Author keywords

Films; Hopping transport; Photoconduction; Recombination

Indexed keywords

APPLIED VOLTAGES; CO-EVAPORATION TECHNIQUES; DEFECT STATE; FAST RATE; FREE CARRIERS; HOPPING TRANSPORT; INTENSITY DEPENDENCE; LIFE-TIMES; MONOMOLECULAR RECOMBINATION; PHOTOCONDUCTION; PHOTOCURRENT SIGNALS; PHOTOELECTRIC PROPERTY; POWER LAW; STEADY STATE; TEMPERATURE EFFECTS; TRANSPORT MECHANISM; TRAPPING LEVELS; VARIABLE RANGE HOPPING;

ELECTRON MOBILITY; THIN FILMS;

PHOTOCURRENTS;

EID: 74349104447     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.302     Document Type: Article

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