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Surface Review and Letters

Volumn 16, Issue 6, 2009, Pages 925-928

Preferential orientation growth of aln thin films on Si(111) substrates by plasma-assisted molecular beam epitaxy

(3) Chuah, L S a Hassan, Z a Abu Hassan, H a

a SCHOOL OF PHYSICS (Malaysia)

Author keywords

AlN; FTIR; MBE; Si

Indexed keywords

ALN; ALN THIN FILMS; EPITAXIALLY GROWN; FTIR; HIGH-RESOLUTION X-RAY DIFFRACTION; MICRO RAMAN SPECTROSCOPY; MICRO-RAMAN; PHONON FREQUENCIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PREFERENTIAL ORIENTATION; RAMAN MODES; SI (1 1 1); SI(111) SUBSTRATE; XRD MEASUREMENTS;

CRYSTAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR ORIENTATION; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WIRES; SILICON; SUBSTRATES; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77749292323 PISSN: 0218625X EISSN: None Source Type: Journal
DOI: 10.1142/S0218625X09013499 Document Type: Article

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.