Influence of al monolayers on the properties of AlN layers on Si (111)

Surface Review and Letters

Volumn 16, Issue 1, 2009, Pages 99-103

  Chuah, L S ^a   Hassan, Z ^a   Abu Hassan, H ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

AlN; III V nitrides; Molecular beam epitaxy; Si (111); XRD

Indexed keywords

ALN; ALN FILMS; ALN LAYERS; ALN NUCLEATION LAYERS; FLAT SURFACES; FLUX CONDITIONS; FULL WIDTH AT HALF-MAXIMUM; GROWTH OF GAN; HIGH QUALITIES; HIGH SUBSTRATE TEMPERATURES; III-V NITRIDES; MONOCRYSTALLINE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXIES; POLAR FILMS; SI (111); SI(111) SUBSTRATES; STRUCTURAL QUALITIES; X-RAY DIFFRACTIONS; XRD;

ALUMINA; ALUMINUM; ALUMINUM NITRIDE; CRYSTAL GROWTH; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SILICON; STOICHIOMETRY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65249095536     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X09012354     Document Type: Article

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