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Volumn 376-377, Issue 1, 2006, Pages 424-427

Gallium and nitrogen vacancies in GaN: Impurity decoration effects

(12) Hautakangas, S a Ranki, V a Makkonen, I a Puska, M J a Saarinen, K a Liszkay, L b,g Seghier, D c Gislason, H P c Freitas Jr , J A d Henry, R L d Xu, X e Look, D C f

a AALTO UNIVERSITY (Finland)

b BUNDESWEHR UNIVERSITY MUNICH (Germany)

c UNIVERSITY OF ICELAND (Iceland)

d NAVAL RESEARCH LABORATORY (United States)

e ENTEGRIS INC (United States)

f WRIGHT STATE UNIVERSITY (United States)

g WIGNER RESEARCH CENTRE FOR PHYSICS (Hungary)

Author keywords

Annihilation; Positron; Vacancy

Indexed keywords

ANNEALING; GALLIUM; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; OXYGEN; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

ANNIHILATION; DECORATION EFFECTS; HYDRIDE VAPOR PHASE EPITAXY; VACANCY;

CRYSTAL DEFECTS;

EID: 33645159849 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2005.12.109 Document Type: Conference Paper

Times cited : (22)

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