Influence of fin width on the total dose behavior of p-channel bulk MuGFETs

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 243-245

  Put, Sofie ^a   Simoen, Eddy ^b   Jurczak, Malgorzata ^b   Van Uffelen, Marco ^c   Leroux, Paul ^d   Claeys, Cor ^a  

^a Katholieke Universiteit Leuven   (Belgium)

^b IMEC   (Belgium)

^c BELGIAN NUCLEAR RESEARCH CENTRE   (Belgium)

^d Thomas More University College   (Belgium)

Author keywords

Bulk multiple gate field effect transistors (MuGFETs); Gamma radiation; Geometric dependence

Indexed keywords

FINFET; GAMMA RAYS; JUNCTION GATE FIELD EFFECT TRANSISTORS;

BULK MULTIPLE-GATE FIELD-EFFECT TRANSISTOR; FIN WIDTHS; GEOMETRIC DEPENDENCE; MULTIPLE-GATE FIELD-EFFECT TRANSISTORS; P CHANNELS; RADIATION BEHAVIOR; RADIATION-INDUCED; TOTAL DOSE; TRENCH ISOLATION;

FINS (HEAT EXCHANGE);

EID: 77649180158     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039633     Document Type: Article

References (6)

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