Influence of fin width on the total dose behavior of p-channel bulk MuGFETs

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 243-245

  Put, Sofie ^a   Simoen, Eddy ^b   Jurczak, Malgorzata ^b   Van Uffelen, Marco ^c   Leroux, Paul ^d   Claeys, Cor ^a  

^a Katholieke Universiteit Leuven   (Belgium)

^b IMEC   (Belgium)

^c BELGIAN NUCLEAR RESEARCH CENTRE   (Belgium)

^d Thomas More University College   (Belgium)

Author keywords

Bulk multiple gate field effect transistors (MuGFETs); Gamma radiation; Geometric dependence

Indexed keywords

FIN WIDTHS; GAMMA RADIATION; MULTIPLE-GATE FIELD-EFFECT TRANSISTORS; RADIATION BEHAVIOR; RADIATION-INDUCED; SHALLOW TRENCH ISOLATION; TOTAL DOSE;

FINS (HEAT EXCHANGE); GAMMA RAYS;

FIELD EFFECT TRANSISTORS;

EID: 77649180158     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039633     Document Type: Article

References (6)

1. X. Wu, P. C. H. Chan, A. Orozco, A. Vazquez, A. Chaudry, and J. P. Colinge, "Dose radiation effects in FinFETs," Solid State Electron., vol.50, no.2, pp. 287-290, Feb. 2006.
2. W. Xiong, C. R. Cleavelin, C. H. Hsu, M. Ma, T. Schul, K. Schruefer, P. Patruno, and J.-P. Colinge, "Multi-gate SOI MOSFET operations in harsh environments," in Proc. IEEE Int. SOI Conf., 2007, pp. 29-30.
3. J. P. Colinge, A. Orozco, J. Rudee, W. Xiong, C. R. Cleavelin, and T. Schulz, "Radiation dose effects in trigate SOI MOS transistors," IEEE Trans. Nucl. Sci., vol.53, no.6, pp. 3237-3241, Dec. 2006.
4. A. Griffoni, S. Gerardin, G. Meneghesso, A. Paccagnella, E. Simoen, S. Put, and C. Claeys, "Microdose and breakdown effects induced by heavy ions on sub 32-nm triple-gate SOI FETs," IEEE Trans. Nucl. Sci., vol.55, no.6, pp. 3182-3188, Dec. 2008.
5. S. Put, E. Simoen, N. Collaert, C. Claeys, M. Van Uffelen, and P. Leroux, "Geometry and strain dependence of the proton radiation behavior of MuGFET devices," IEEE Trans. Nucl. Sci., vol.54, no.6, pp. 2227-2232, Dec. 2007.
6. M. Gaillardin, P. Paillet, V. Ferlet-Cavrois, O. Faynot, C. Jahan, and S. Cristoloveanu, "Total ionizing dose effects in triple-gate FETs," IEEE Trans. Nucl. Sci., vol.53, no.6, pp. 3158-3165, Dec. 2006.