Geometry and strain dependence of the proton radiation behavior of MuGFET devices

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2227-2232

  Put, S ^a,b,c,d   Simoen, E ^c   Collaert, N ^c   Claeys, C ^a,b,c   Van Uffelen, M ^e   Leroux, P ^d,e  

^a IEEE   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC   (Belgium)

^d BELGIAN NUCLEAR RESEARCH CENTRE   (Belgium)

^e Thomas More University College   (Belgium)

Author keywords

Fully depleted; Multiple gate transistors; Proton irradiation effects; Strain

Indexed keywords

FULLY DEPLETED; MULTIPLE GATE TRANSISTORS; PROTON IRRADIATION EFFECTS;

COMPUTATIONAL GEOMETRY; IRRADIATION; RADIATION EFFECTS; TRANSCONDUCTANCE; TRANSISTORS;

PROTONS;

EID: 37249015970     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.911420     Document Type: Conference Paper

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