Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films

Materials Science and Technology Conference and Exhibition 2009, MS and T'09

Volumn 1, Issue , 2009, Pages 277-286

  Shet, Sudhakar ^a,b   Ahn, Kwang Soon ^c   Ravindra, N M ^b   Yan, Yanfa ^a   Deutsch, Todd ^a   Turner, John ^a   Al Jassim, M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c Yeungnam University   (South Korea)

Author keywords

Al incorporation; Bandgap reduction; Co doping; F doped tin oxide; Ga incorporation; Photoelectrochemical; Post deposition annealing; Sputtering

Indexed keywords

AL INCORPORATION; BAND GAP REDUCTION; CO-DOPING; PHOTOELECTROCHEMICAL; PHOTOELECTROCHEMICALS; POST DEPOSITION ANNEALING;

ALUMINUM; ANNEALING; DOPING (ADDITIVES); ENERGY GAP; GALLIUM; GALLIUM ALLOYS; LITHIUM COMPOUNDS; METALLIC FILMS; TIN; TITANIUM COMPOUNDS;

ZINC OXIDE;

EID: 77649119080     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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