Resistance reduction induced by small electric current in CoCu porous films

Journal of Physical Chemistry C

Volumn 114, Issue 5, 2010, Pages 2300-2304

  Li, Zhigang ^a,b   Cai, Weiping ^a   Liu, Peisheng ^a,c   Li, Qintao ^b   Zou, Liangjian ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b TAIZHOU UNIVERSITY   (China)

^c NANTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COATED GLASS SUBSTRATES; COLLOIDAL TEMPLATES; CURRENT-DRIVEN; DOUBLE LAYERED; ELECTROCHEMICAL DEPOSITION; EXTERNAL MAGNETIC FIELD; FIXED CURRENT; HIGH MAGNETIC FIELDS; INDIUM TIN OXIDE; INITIAL STATE; LOW CURRENT DENSITY; LOW FIELD; POROUS FILM; REDUCTION BEHAVIOR; RESISTANCE REDUCTION; STEADY STATE;

CURRENT DENSITY; DOMAIN WALLS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC FIELDS; OXIDE FILMS; RELAXATION PROCESSES; TIN; TITANIUM COMPOUNDS;

REDUCTION;

EID: 77249113361     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp910749b     Document Type: Article

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