Relaxation phenomena in current-induced switching in thin magnetic tunnel junctions

Journal of Magnetism and Magnetic Materials

Volumn 290-291 PART 2, Issue , 2005, Pages 1067-1070

  Ventura, J ^a   Araujo, J P ^a   Carpinteiro, F ^a   Sousa, J B ^a   Liu, Y ^b   Zhang, Z ^b   Freitas, P P ^b  

^a UNIVERSITY OF PORTO   (Portugal)

^b INESC   (Portugal)

Author keywords

Current induced switching; Electrical resistivity temperature dependent; Electromigration; Tunneling

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTROMIGRATION; INSULATION; MAGNETIC FIELDS; RELAXATION PROCESSES; SWITCHING; THERMAL EFFECTS;

CURRENT-INDUCED SWITCHING; SPIN VALVES; TEMPERATURE DEPENDENCE; THIN INSULATING BARRIERS;

TUNNEL JUNCTIONS;

EID: 14944383706     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2004.11.460     Document Type: Article

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