Recessed AlGaN/GaN HEMT with high output power in the X band

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue 11, 2007, Pages 1773-1776

  Feng, Zhen ^a,b   Zhang, Zhiguo ^a,b,c   Wang, Yong ^a,b   Mo, Jianghui ^a,b   Song, Jianbo ^a,b   Feng, Zhihong ^a,b   Cai, Shujun ^a,b   Yang, Kewu ^a,b  

^a National Key Laboratory of ASIC   (China)

^b CETC   (China)

^c XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN GaN HEMT; High output power density; Internally matched device

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CONTACT RESISTANCE; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; SILICON CARBIDE;

BREAKDOWN VOLTAGE; HIGH OUTPUT POWER DENSITY; INTERNALLY MATCHED DEVICE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 37149056920     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Khan M A, Bhattarai A, Kuznia J N, et al. High electron mobility transistor based on a GaN-AlGaN heterojunction. Appl Phys Lett, 1993, 63(9): 1214
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4. Zhang Zhiguo, Yang Ruixia, Wang Yong, et al. AlGaN/GaN HFET with transconductance of over 325 mS/mm. Chinese Journal of Semiconductors, 2005, 26(9): 1789 (in Chinese)
5. Zhang Zhiguo, Yang Ruixia, Li Li, et al. Output power of an AlGaN/GaN HFET on sapphire substrate. Chinese Journal of Semiconductors, 2006, 27(7): 1255 (in Chinese)
6. Chen Tangsheng, Jiao Gang, Li Zhonghui, et al. AlGaN/GaN MIS HEMT with AlN dielectric. CS MANTECH Conference, 2006: 227