Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

Advanced Materials

Volumn 22, Issue 6, 2010, Pages 697-701

  Wang, Chenchen ^b   Jimison, Leslie H ^a   Goris, Ludwig ^a   McCulloch, Iain ^c   Heeney, Martin ^c   Ziegler, Alexander ^d   Salleo, Alberto ^a  

^a Stanford University   (United States)

^b Applied Physics   (United States)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d MAX PLANCK INSTITUTE OF BIOCHEMISTRY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH MOBILITY; MICRO-STRUCTURAL; NANO-METER-SCALE; TRAP DENSITY;

ATOMIC FORCE MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SOIL CONSERVATION; THIOPHENE; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILM TRANSISTORS;

POLYMER; THIOPHENE DERIVATIVE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL STRUCTURE; CHEMISTRY; SEMICONDUCTOR; TEMPERATURE;

MICROSCOPY, ATOMIC FORCE; MODELS, MOLECULAR; POLYMERS; TEMPERATURE; THIOPHENES; TRANSISTORS, ELECTRONIC;

EID: 77049097939     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.200902303     Document Type: Article

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