Effect of surface stress around the SA step of Si(001) on the dimer structure determined by noncontact atomic force microscopy at 5K

Journal of the Physical Society of Japan

Volumn 79, Issue 1, 2010, Pages

  Naitoh, Yoshitaka ^a   Li, Yan Jun ^a   Nomura, Hikaru ^a   Kageshima, Masami ^a   Sugawara, Yasuhiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Atomic force microscopy; Silicon; Surface strain; Surface stress

Indexed keywords

EID: 77049096948     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.1143/JPSJ.79.013601     Document Type: Article

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28. The provided step structure [Fig. 4(a)] was always observed in the NC-AFM experiments on the Si(001) surface at 5K. On the other hand, STM experiments show that the buckling-down dimer atom on the upper step edge is located between the dimer rows of the lower terrace. This step structure yields the compressive strain in the step direction toward the lower terrace.