Nanoscale tapered pt bottom electrode fabricated by FIB for low power and highly stable operations of phase change memory

Chinese Physics Letters

Volumn 27, Issue 2, 2010, Pages

  Lv, Shi Long ^a   Song, Zhi Tang ^a   Liu, Yan ^a,b   Feng, Song Lin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; ELECTRODES; FABRICATION; GERMANIUM COMPOUNDS; ION BEAMS; PHASE CHANGE MATERIALS; PHASE CHANGE MEMORY; PLATINUM; SILICON COMPOUNDS; TELLURIUM COMPOUNDS;

BOTTOM ELECTRODES; FOCUS ION BEAM; HIGHLY STABLES; LOW POWER; NANO SCALE; PHASE-CHANGE MEMORY; PHASE-CHANGE RANDOM ACCESS MEMORY; STABLE OPERATION; TEMPERATURE RISE; TUNGSTEN ELECTRODES;

THERMAL CONDUCTIVITY;

EID: 77049096040     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/27/2/028401     Document Type: Article

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