Metalorganic chemical vapor deposition of non-GST chalcogenide materials for phase change memory applications

Journal of Materials Chemistry

Volumn 20, Issue 9, 2010, Pages 1751-1754

  Ahn, Jun Ku ^a   Park, Kyoung Woo ^a   Hur, Sung Gi ^a   Seong, Nak Jin ^a   Kim, Chung Soo ^b   Lee, Jeong Yong ^b   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CHALCOGENIDE FILMS; CHALCOGENIDE MATERIALS; CONFORMAL DEPOSITION; CRYSTALLINE PHASIS; CRYSTALLINE STATE; DEPOSITION CONDITIONS; FUNCTIONAL CHARACTERISTICS; HIGH-ASPECT RATIO; LOW TEMPERATURES; MEMORY DEVICE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; MULTILEVEL DATA; NEW MATERIAL; PHASE SWITCHING;

AMORPHOUS FILMS; ASPECT RATIO; CRYSTALLINE MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE DROP; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 76949096872     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/b922398c     Document Type: Article

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