InSbTe phase-change materials for high performance multi-level recording

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 B, 2003, Pages 795-799

  Daly Flynn, Kelly ^a   Strand, David ^a  

^a Energy Conversion Devices Inc   (United States)

Author keywords

Crystallization time; InSbTe; Multi level; Optical memory; Phase change

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL STRUCTURE; CRYSTALLIZATION; EUTECTICS; MELTING; OPTICAL DATA STORAGE; SEMICONDUCTING INDIUM COMPOUNDS; STOICHIOMETRY;

INDIUM ANTIMONY TELLURIDE; MULTI LEVEL RECORDING; RHOMBOHEDRAL CRYSTAL STRUCTURE; SIGMA TO DYNAMIC RANGE; SOLID STATE CRYSTALLIZATION TIME;

OPTICAL RECORDING;

EID: 0038060392     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.795     Document Type: Article

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